Low voltage flash memory by use of a substrate bias

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 389-394

  Mastrapasqua, Marco ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); IONIZATION; LUMINESCENCE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR STORAGE; SUBSTRATES;

ELECTRON DISTRIBUTION; FLASH MEMORY; HOT ELECTRON LUMINESCENCE; IMPACT IONIZATION;

MOSFET DEVICES;

EID: 0033190189     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00412-8     Document Type: Article

References (6)

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3. M. Pavesi, L. Selmi, M. Manfredi, E. Sangiorgi, M. Mastrapasqua and J. Bude "Evidence of substrate enhanced high energy tails in the distribution function of deep submicron MOSFETs by light emission measurements" submitted to Electron Device Letters, 1999.
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5. C. Y.Hu, D.L. Kencke and S.K. Banerjee "Substrate-Current-Induced Hot Electron (SCIHE) injection: a new convergence scheme for flash memory" 1995 IEDM Tech. Digest p. 283, 1995.
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