Scaling properties of CHISEL and CHE injection efficiency in MOSFETs and flash memory cells

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 275-278

  Esseni, David ^a   Selmi, Luca ^a   Ghetti, Andrea ^a   Sangiorgi, Enrico ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; MONTE CARLO METHODS; RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

CHANNEL HOT ELECTRON REGIME; CHANNEL INITIATED SECONDARY ELECTRON INJECTION; FLASH MEMORY CELLS; IMPACT IONIZATION FEEDBACK MECHANISM; NONVOLATILE MEMORY;

MOSFET DEVICES;

EID: 0033347823     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)