A better understanding of substrate enhanced gate current in VLSI MOSFET's and flash cells-part I: Phenomenological aspects

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 369-375

  Esseni, David ^a   Selmi, Luca ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

Charge injection; EPROM; Hot carriers; Mosfet's; Substrate voltage

Indexed keywords

CORRELATION METHODS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOT CARRIERS; PROM; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; VLSI CIRCUITS;

CHARGE INJECTION; ERASABLE PROGRAMMABLE READ ONLY MEMORY (EPROM);

MOSFET DEVICES;

EID: 0033079587     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740904     Document Type: Article

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