A self-convergence erasing scheme for a simple stacked gate flash EEPROM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 307-310

  Yamada, Seiji ^a   Suzuki, Tomoko ^a   Obi, Etsushi ^a   Oshikiri, Masamitsu ^a   Naruke, Kiyomi ^a   Wada, Masashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CMOS technology; EPROM; Flash memory; Hot carrier injection; Hot carriers; Nonvolatile memory; Secondary generated hot electron injection; Steady state; Threshold voltage; Tunneling

Indexed keywords

BANDPASS FILTERS; CHARGE INJECTION; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRON DEVICES; ELECTRON INJECTION; ELECTRON TUNNELING; ELECTRONS; HOT CARRIERS; HOT ELECTRONS; PROM; RECONFIGURABLE HARDWARE; THRESHOLD VOLTAGE;

CMOS TECHNOLOGY; EPROM; HOT CARRIER INJECTION; NON-VOLATILE MEMORY; STEADY STATE;

FLASH MEMORY;

EID: 84954185679     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235442     Document Type: Conference Paper

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