Substrate-current-induced hot electron (SCIHE) injection: a new convergence scheme for flash memory

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 283-286

  Hu, C Y ^a   Kencke, D L ^a   Banerjee, S K ^a   Richart, R ^a   Bandyopadhyay, B ^a   Moore, B ^a   Ibok, E ^a   Garg, S ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; ENERGY DISSIPATION; HOT CARRIERS; IONIZATION; PROM; RELIABILITY; SEMICONDUCTOR DOPING;

DRAIN AVALANCHE HOT CARRIER INJECTION; DRAIN VOLTAGE; EEPROM TECHNOLOGY; FLASH MEMORY; GATE TUNNEL OXIDE; IMPACT IONIZATION; POWER DISSIPATION; SUBSTRATE BIAS; SUBSTRATE CURRENT INDUCED HOT ELECTRON INJECTION;

ELECTRON TUNNELING;

EID: 0029516372     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)