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Volumn 46, Issue 1, 1999, Pages 125-133

A new and flexible scheme for hot-electron programming of nonvolatile memory cells

Author keywords

Current absorption; Flash EEPROM; Hot electrons; Programming; Soft programming

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); NONVOLATILE STORAGE; PARTICLE BEAM INJECTION; THRESHOLD VOLTAGE;

EID: 0032738943     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737450     Document Type: Article
Times cited : (33)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.