A new and flexible scheme for hot-electron programming of nonvolatile memory cells

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 125-133

  Esseni, David ^a   Strada, Alessandro Delia ^b   Cappelletti, Paolo ^a   Riccö, Bruno ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Current absorption; Flash EEPROM; Hot electrons; Programming; Soft programming

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); NONVOLATILE STORAGE; PARTICLE BEAM INJECTION; THRESHOLD VOLTAGE;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); HOT ELECTRON PROGRAMMING; SOFT PROGRAMMING;

PROM;

EID: 0032738943     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737450     Document Type: Article

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