Optical, electrical and thermal analysis for GaN semiconductor lasers

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 14, Issue 4, 2001, Pages 303-323

  Hatakoshi, Gen Ichi ^a   Onomura, Masaaki ^a   Ishikawa, Masayuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Carrier overflow; Device simulation; GaN; Maximum operation temperature; Semiconductor laser; Thermal resistance; Waveguide mode

Indexed keywords

CURRENT DENSITY; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; INTEGRATION; LASER MODES; OPTICAL WAVEGUIDES; THERMAL CONDUCTIVITY; THERMOANALYSIS;

WAVEGUIDE MODES;

SEMICONDUCTOR LASERS;

EID: 0035392329     PISSN: 08943370     EISSN: None     Source Type: Journal    
DOI: 10.1002/jnm.414     Document Type: Article

References (37)

1. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
2. Analysis of device characteristics for InGaN laser diodes
3. InGaAlP visible laser diodes
4. Radiation from a solid-state laser
5. Obliquity-factor correction to solid-state radiation patterns
6. Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasers
7. Short-wavelength semiconductor lasers for optical memory
8. Room-temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates
9. A self-consistent static model of the double-heterostructure laser
10. General two-dimensional device simulator for laser diodes
11. Two-dimensional device simulator for generalized LED structures
12. Reactive ion beam etching and overgrowth process in the fabrication of InGaN inner stripe laser diodes
13. Thermal analysis for GaN laser diodes
14. Thermal analysis for LSI package
15. Thermal analysis for InGaAlP laser diodes
16. 0.95N multiquantum well laser structures
17. Analysis of transverse modes of nitride-based laser diodes
18. Analysis of transverse modes of nitride-based laser diodes
19. Density-matrix theory of semiconductor lasers with relaxation broadening model - Gain and gain suppression in semiconductor lasers
20. Analysis of current overflow for GaN based laser diodes
21. Thermal behavior of visible AlGaInP-GaInP ridge laser diodes
22. Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength
23. High-temperature operation of high-power InGaAlP laser diodes
24. Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K
25. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
26. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
27. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
28. High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes
29. Continuous-wave operation at 250 K of InGaN multiple quantum well laser diodes grown on 6H-SiC with vertical conducting structure
30. Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with backside n-contact
31. Continuous wave operation at room temperature of InGaN multiple quantum well laser diodes fabricated on 4H-SiC substrates
32. Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes with an asymmetric waveguide structure
33. Raised-pressure MOVPE and AlGaInN laser diodes