96 W AlGaN/GaN heterojunction FET with field-modulating plate

Electronics Letters

Volumn 39, Issue 20, 2003, Pages 1474-1475

  Okamoto, Y ^a   Ando, Y ^a   Hataya, K ^a   Miyamoto, H ^a   Nakayama, T ^a   Inoue, T ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

FIELD MODULATING PLATE;

FIELD EFFECT TRANSISTORS;

EID: 0142084646     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030947     Document Type: Article

References (6)

1. MISHRA, U.K., PARIKH, P., and WU, Y.-F.: 'AlGaN/GaN HEMTs - an overview of device operation and application', Proc. IEEE, 2002, 90, (6), pp. 1022-1031
2. ANDO. Y., OKAMOTO, Y., MIYAMOTO, H., HAYAMA, N., NAKAYAMA, T., KASAHARA, K., and KUZUHARA, M.: 'A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate'. IEEE IEDM Tech. Dig., Washington, DC, USA, 2001, pp. 381-384
3. EASTMAN, L.F.: 'Experimental power-frequency limits of AlGaN/GaN HEMTs'. IEEE MTT-S Dig., Seattle, USA, 2002, pp. 2273-2275
4. PRIBBLE, W.L., PALMOUR, J.W., SHEPPARD, S.T., SMITH. R.P., ALLEN, S.T., SMITH, T.J., RING, Z., SUMAKERIS, J.J., SAXLER. A.W., and MILLIGAN. J.W.: 'Application of SiC MESFETs and GaN HEMTs in power amplifier design'. IEEE MTT-S Dig., Seattle, USA, 2002, pp. 1819-1822
5. KIKKAWA, T., NAGAHARA. M., ADACHI, N., YOKOKAWA, S., KATO, S., YOKOYAMA. M., KANAMURA, M., YAMAGUCHI, Y., HARA, N., and JOSHIN, K.: 'High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage'. RFIC Dig., Philadelphia, USA, 2003, pp. 167-170
6. OKAMOTO, Y., ANDO, Y., MIYAMOTO, H., NAKAYAMA, T., NOUE, T., and KUZUHARA, M.: 'An 80 W AlGaN/GaN heterojunction FET with a field-modulating plate'. IEEE MTT-S Dig., Philadelphia, USA, 2003, pp. 225-228