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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 4 A, 2003, Pages

Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier

(9) Wong, Michael M a Chowdhury, Uttiya a Sicault, Delphine a Becher, David T b Denyszyn, Jonathan C a Choi, Jin Ho a Zhu, Ting Gang a Feng, Milton b Dupuis, Russell D a

a The University of Texas at Austin (United States)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

Delta doping; Gallium nitride; HEMT; HFET; High electron mobility transistors; MOCVD growth

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CURRENT DENSITY; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; DELTA DOPING; HETEROJUNCTION FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0038044755 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l353 Document Type: Letter

Times cited : (7)

References (7)

1
- 0035506622
- V. Tilak B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, J. Shealy and L. Eastman, IEEE Electron Device Lett. 22, (2001) 504.
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 504
- Tilak, V.¹ Green, B.² Kaper, V.³ Kim, H.⁴ Prunty, T.⁵ Smart, J.⁶ Shealy, J.⁷ Eastman, L.⁸

2
- 0031078426
- N. X. Nguyen, B. P. Keller, S. Keller, Y.-F. Wu, M. Le, C. Nguyen, S. P. Denhaars, U. K. Mishra and D. Grider: Electron. Lett. 33 (1997) 334.
- (1997) Electron. Lett. , vol.33 , pp. 334
- Nguyen, N.X.¹ Keller, B.P.² Keller, S.³ Wu, Y.-F.⁴ Le, M.⁵ Nguyen, C.⁶ Denhaars, S.P.⁷ Mishra, U.K.⁸ Grider, D.⁹

3
- 0033723911
- A. Vescan, R. Dietrich, A. Wieszt, A. Schurr, H. Leier, E. L. Piner and J. M. Redwing. Electron. Lett. 36 (2000) 1234.
- (2000) Electron. Lett. , vol.36 , pp. 1234
- Vescan, A.¹ Dietrich, R.² Wieszt, A.³ Schurr, A.⁴ Leier, H.⁵ Piner, E.L.⁶ Redwing, J.M.⁷

4
- 4243233826
- (IEEE Press, Piscataway)
- Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. P. Keller and U. K. Mishra: IEDM Tech. Dig. (IEEE Press, Piscataway) 1999, p. 16.7.1.
- (1999) IEDM Tech. Dig.
- Wu, Y.-F.¹ Kapolnek, D.² Ibbetson, J.³ Zhang, N.-Q.⁴ Parikh, P.⁵ Keller, B.P.⁶ Mishra, U.K.⁷

5
- 0001590229
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittner, M. Stutzmann, W. Rieger and J. Hilsenbeck. J. Appl. Phys. 85 (1999) 3222.
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸ Dimitrov, R.⁹ Wittner, L.¹⁰ Stutzmann, M.¹¹ Rieger, W.¹² Hilsenbeck, J.¹³

6
- 0035474079
- L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. Denbaars and U. K. Mishra: IEEE Electron Device Lett. 22 (2001) 457.
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 457
- Shen, L.¹ Heikman, S.² Moran, B.³ Coffie, R.⁴ Zhang, N.-Q.⁵ Buttari, D.⁶ Smorchkova, I.P.⁷ Keller, S.⁸ Denbaars, S.P.⁹ Mishra, U.K.¹⁰

7
- 0037171927
- M. M. Wong, U. Chowdhury, D. Sicault, D. T. Becher, J. C. Denyszyn, T. G. Zhu, M. Feng and R. D. Dupuis; Electron. Lett. 38 (2002) 428.
- (2002) Electron. Lett. , vol.38 , pp. 428
- Wong, M.M.¹ Chowdhury, U.² Sicault, D.³ Becher, D.T.⁴ Denyszyn, J.C.⁵ Zhu, T.G.⁶ Feng, M.⁷ Dupuis, R.D.⁸

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