Engineering and impact of surface states on AlGaN/GaN-based hetero field effect transistors

Semiconductor Science and Technology

Volumn 20, Issue 9, 2005, Pages 972-978

  Mistele, D ^a,b   Katz, O ^a,c   Horn, A ^a,d   Bahir, G ^a   Salzman, J ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b CyOptics (Israel) Ltd Shaar Yokneam   (Israel)

^c IBM HAIFA RESEARCH LAB   (Israel)

^d INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; FERMI LEVEL; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; OXIDATION; PLASMA THEORY;

CAPPING; CHANNEL CURRENTS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); SURFACE STATES;

FIELD EFFECT TRANSISTORS;

EID: 23944495676     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/9/015     Document Type: Article

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