Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 835-839

  Choi, Kyoung Jin ^a   Jang, Ho Won ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036920664     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<835::AID-PSSB835>3.0.CO;2-4     Document Type: Conference Paper

References (9)

1. I. Adesida, C. Youtsey, A.T. Prig, F. Khan, L.T. Romano, and G. Bulmann, MRS Internet J. Nitride Semicond. Res. 4S1, G1.4 (1999).
2. C.R. Eddy, Jr. and B. Molnar, J. Electron. Mater. 28, 314 (1999).
3. X.A. Cao, H. Cho, S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman, and J.M. Van Hove, Appl. Phys. Lett. 75, 232 (1999).
4. K.J. Choi and J.-L. Lee, IEEE Trans. Electron Devices 48, 190 (2001).
5. K.J. Choi, J.-L. Lee, and H.M. Yoo, Appl. Phys. Lett. 75, 1580 (1999).
6. Z.-Q. Fang, J.W. Hemsky, D.C. Look, and M.P. Mack, Appl. Phys. Lett. 72, 448 (1998).
7. F.D. Auret, S.A. Goodman, F.K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, MRS Internet J. Nitride Semicond. Res. 4S1, G6.13 (1999).
8. S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 78, 3815 (2001).
9. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake, J. Appl. Phys. 76, 304 (1994).