Influence of pre-etching on specific contact parameters for metal-GaN contacts

Semiconductor Science and Technology

Volumn 14, Issue 7, 1999, Pages 637-641

  Mistele, D ^a   Aderhold, J ^a   Klausing, H ^a   Rotter, T ^a   Semchinova, O ^a   Stemmert, J ^a   Uffmann, D ^a   Graul, J ^a   Eberhard, F ^b   Mayer, M ^b   Schauler, M ^b   Kamp, M ^b   Ahrens, C ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC RESISTANCE; ETCHING; MATHEMATICAL MODELS; NITROGEN; OHMIC CONTACTS; SPUTTER DEPOSITION; TRANSMISSION LINE THEORY;

CHEMICALLY ASSISTED ION BEAM ETCHING; CIRCULAR TRANSMISSION LINE MODELS (CTLM); SPUTTER ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033153957     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/7/309     Document Type: Article

References (19)

1. Fijol J F and Holloway P H 1996 Crit. Rev. Solid State Mater. Sci. 21 77
2. Liu Q Z and Lau S S 1998 Solid State Electron. 42 667
3. Fan Z, Mohammad S N, Kim W, Aktas Ö, Botchkarev A E and Morkoç H 1996 Appl. Phys. Lett. 68 1672
4. Piquette E C, Bandic Z Z and McGill T C 1998 Mater. Res. Soc. Symp. Proc. 482 1089
5. Burm J, Chu K, Davis W A, Schaff W J, Eastman L F and Eustis T J 1997 Appl. Phys. Lett. 70 464
6. Kamp M, Mayer M, Pelzmann A and Ebeling K J 1997 Mater. Res. Soc. Svmp. Proc. 449 161
7. Kamp M, Mayer M, Pelzmann A and Ebeling K J 1997 MRS Internet J. Nitride Semicond. Res. 2 (1997) 26
8. Schauler M, Kirchner C, Mayer M, Pelzmann A, Eberhard F, Kamp M, Unger P and Ebeling K J 1997 MRS Internet J. Nitride Semicond. Res. 2 (1997) 44
9. Pang S W, Geis M W, Efremow N N and Lincoln G A 1985 J. Vac. Sci. Technol. B 3 398
10. Hunt R W et al 1993 Physica B 185 415
11. Reeves G K 1980 Solid State Electron. 23 487
12. Kampen T U and Mönch W 1997 Appl. Surf. Sci. 117-118 388
13. Kribes Y, Harrison I, Tuck B, Cheng T S and Foxon C T 1997 Semicond. Sci. Technol. 12 913
14. Liu Q Z, Yu L S, Lau S S, Redwing J M, Perkins N R and Kuech T F 1997 Appl. Phys. Lett. 70 1275
15. Strife S C 1994 Properties of Group III Nitrides (Emis Data Reviews Series) ed J H Edgar (London: INSPEC) p 257
16. Ziegler J F (ed) 1992 Handbook of Ion Implantation Technology (Amsterdam: North-Holland) p 14
17. Ruvimov S, Liliental-Weber Z, Washburn J, Duxstad K J, Haller E E, Fan Z F, Mohammad S N, Kim W, Botchkarev A E and Morkoç H 1996 Appl. Phys. Lett. 69 1556
18. Tsai W, Delfino M, Fair J A and Hodul D 1993 J. Appl. Phys. 73 4462
19. Miller S and Holloway P H 1996 J. Electron. Mater. 25 1709