Influence of process technology on DC-performance of GaN-based HFETs

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 452-455

  Mistele, D ^a   Rotter, T ^a   Bougrioua, Z ^b   Marso, M ^c   Roll, H ^d   Klausing, H ^a   Fedler, F ^a   Semchinova, O ^a   Aderhold, J ^a   Moerman, I ^e   Graul, J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b CRHEA CNRS   (France)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d UNIVERSITY OF STUTTGART   (Germany)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTROCHEMISTRY; GALLIUM NITRIDE; GATES (TRANSISTOR); PHOTOCHEMICAL REACTIONS; REDUCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE CHEMISTRY; SURFACE TREATMENT; TRANSCONDUCTANCE;

HETERO FIELD EFFECT TRANSISTORS; PHOTOELECTROCHEMICAL TREATMENT; PROCESS TECHNOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 0036960095     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<452::AID-PSSA452>3.0.CO;2-N     Document Type: Article

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