Soft breakdown of hafnium oxynitride gate dielectrics

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Wang, Jer Chyi ^a   Shie, De Ching ^b   Lei, Tan Fu ^b   Lee, Chung Len ^b  

^a NANYA TECHNOLOGY CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXYNITRIDE (HFON); INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS (ITRS); RANDOM TELEGRAPH NOISE; SOFT BREAKDOWN;

COMPUTER SIMULATION; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON BEAMS; ELECTRON TRAPS; GATES (TRANSISTOR); SEMICONDUCTING FILMS; TELEGRAPH INTERFERENCE; ULSI CIRCUITS; ULTRATHIN FILMS;

HAFNIUM COMPOUNDS;

EID: 23844440928     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1977198     Document Type: Article

References (45)

1. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, 2003).
2. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) 399, 758 (1999).
3. A. I. Kingon, J. P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
4. S.-H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 18, 209 (1997).
5. S. Okhonin and P. Fazan, Adv. Semi. Devices and Microsystems 5 (1998).
6. J. H. Stathis and D. J. DiMaria, Tech. Dig. - Int. Electron Devices Meet. 167 (1998).
7. E. Wu, E. Nowak, A. Vayshenker, J. McKenna, D. Harmon, and R.-P. Vollertsen, IEEE Trans. Device Mater. Reliab. 1, 69 (2001).
8. S. B. Samavedam, Tech. Dig. - Int. Electron Devices Meet. 433 (2002).
9. K. Kukli, M. Ritala, J. Sundqvist, J. Aarik, J. Lu, T. Sajavaara, M. Leskelä, and A. Hårsta, J. Appl. Phys. 92. 5698 (2002).
10. M. Koyama, Tech. Dig. - Int. Electron Devices Meet. 849 (2002)
11. A. Callegari, E. Cartier, M. Gribelyuk, H. F. Okorn-Schmidt, and T. Zabel, J. Appl. Phys. 90, 6466 (2001).
12. W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett. 23, 649 (2002).
13. J.-H. Lee, VLSI Tech. Symp. Dig. 84 (2002).
14. C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 857 (2002).
15. C. S. Kang, Tech. Dig. - Int. Electron Devices Meet. 865 (2002).
16. S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi, Tech. Dig. - Int. Electron Devices Meet. 605 (1994).
17. M. Depas, T. Nigam, and M. Heyns, IEEE Trans. Electron Devices 43, 1499 (1996).
18. Y. H. Kim, IEEE Electron Device Lett. 23, 594 (2002).
19. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, Tech. Dig. - Int. Electron Devices Meet. 863 (1995).
20. M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, J. Appl. Phys. 84, 4351 (1998).
21. J. H. Stathis and D. J. DiMaria, Tech. Dig. - Int. Electron Devices Meet. 167 (1998).
22. J. H. Stathis, Proc. Int. Rel. Phys. Symp. 132 (2001).
23. E. M. Vogel, J. S. Suehle, M. D. Edelstein, B. Wang, Y. Chen, and J. B. Bernstein, IEEE Trans. Electron Devices 47, 1183 (2000).
24. D. J. DiMaria, J. Appl. Phys. 86, 2100 (1999).
25. P. E. Nicollian, W. R. Hunter, and J. C. Hu, Proc. Int. Rel. Phys. Symp. 7 (2000).
26. T. Tomita, H. Utsunomiya, T. Sakura, Y. Kamakura, and K. Taniguchi, IEEE Trans. Electron Devices 46, 159 (1999).
27. T. Sakura, H. Utsunomiya, Y. Kamakura, and K. Taniguchi, Tech. Dig. - Int. Electron Devices Meet. 183 (1998).
28. L. M. Lust and J. Kakalios, Phys. Rev. Lett. 75, 2192 (1995).
29. M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
30. M. Nafría, J. Suń, and X. Aymerich, J. Appl. Phys. 73, 205 (1993).
31. S. J. Lee, S. J. Rhee, R. Clark, and D. L. Kwong, VLSI Tech. Symp. Dig. 78 (2002).
32. Y. H. Kim, K. Onishi, C. S. Kang, H.-J. Cho, R. Choi, S. Krishnan, M. S. Akbar, and J. C. Lee, IEEE Electron Device Lett. 24, 40 (2003).
33. Y. H. Kim, IEEE Electron Device Lett. 23, 594 (2002).
34. Y. H. Kim, Tech. Dig. - Int. Electron Devices Meet. 629 (2002).
35. J. C. Wang, D. C. Shie, T. F. Lei, and C. L. Lee, Electrochem. Solid-State Lett. 6, F34 (2003).
36. B. E. Weir, Tech. Dig. - Int. Electron Devices Meet. 73 (1994).
37. K.-Y. Fu, Solid-State Electron. 41, 774 (1997).
38. K. Okada, J. Appl. Phys. 97, 074505 (2005).
39. T. Kauerauf, R. Degraeve, E. Cartier, C. Soens, and G. Groesenenken, IEEE Trans. Electron Devices 23, 215 (2002).
40. T. H. Ning, Proc. Int. Rel. Phys. Symp. 1 (2000).
41. S.-M. Lee and D. G. Cahill, J. Appl. Phys. 81, 2590 (1997).
42. T. Yamane, N. Nagai, S.-I. Katayama, and M. Todoki, J. Appl. Phys. 91, 9772 (2002).
43. P. Pan, J. Appl. Phys. 61, 284 (1987).
44. R. Degraeve, B. Kaczer, M. Houssa, G. Groeseneken, M. Heyns, J. S. Jeon, and A. Halliyal, Tech. Dig. - Int. Electron Devices Meet. 327 (1999).
45. R. Degraeve, Proc. Int. Rel. Phys. Symp. 23 (2003).