Degradation mechanism of HfAlOX SiO2 stacked gate dielectrics studied by transient and steady-state leakage current analysis

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Okada, Kenji ^a   Mizubayashi, Wataru ^a   Yasuda, Naoki ^a   Ota, Hiroyuki ^a   Tominaga, Koji ^a   Iwamoto, Kunihiko ^a   Horikawa, Tsuyoshi ^a   Yamamoto, Katsuhiko ^a   Hisamatsu, Hirokazu ^a   Satake, Hideki ^a   Nabatame, Toshihide ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Natl Inst Adv Indust Sci/T ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISM; GATE DIELECTRICS; LOW-VOLTAGE PEAK-CURRENT (LVPC); STRESS-INDUCED LEAKAGE CURRENT (SILC);

DEGRADATION; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; SILICA; THICKNESS MEASUREMENT;

HAFNIUM COMPOUNDS;

EID: 20244377858     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1884253     Document Type: Article

References (7)

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5. W. Mizubayashi, International Reliability Physics Symposium Proceedings (IEEE, Phoenix, 2004), p. 188.
6. R. Yamada, J. Yugami, and M. Ohkura, Symposium on VLSI Technology: Digest of Technical Papers, 1997 (unpublished), p. 147.
7. K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials (Japan Society of Applied Physics, Yokohama, 1994), pp. 565-567.