High quality ZnO thin films grown by plasma enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 501-505

  Li, B S ^a   Liu, Y C ^a   Chu, Z S ^a   Shen, D Z ^a   Lu, Y M ^a   Zhang, J Y ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTRA; DEEP-LEVEL DEFECTS; DEPOSITION CHAMBERS; FILM QUALITY; FREE EXCITONS; FREE-EXCITON EMISSIONS; GAS FLOWRATE; HIGH QUALITY; LOW TEMPERATURES; ORGANIC SOURCES; PHOTOLUMINESCENCE SPECTRUM; ROOM TEMPERATURE; SI (100) SUBSTRATE; SI SURFACES; TEMPERATURE DEPENDENCE; WURTZITE STRUCTURE; XRD; ZNO; ZNO FILMS; ZNO THIN FILM;

CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; OPTICAL FILMS; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; VAPORS; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

METALLIC FILMS;

EID: 0036140257     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1415545     Document Type: Article

References (21)

1. M. A. Haase, J. Qiu, J. M. Depuydt, and H. Cheng, Appl. Phys. Lett. 59, 1272 (1991).
2. S. D. Lester, F. A. Ponce, M. Geraford, and D. A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995).
3. R. F. Service, Science 276, 895 (1997).
4. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 73, 1038 (1998).
5. F. Siah, Z. Yang, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, J. Appl. Phys. 88, 2480 (2000).
6. K. Haga, F. Katahira, and H. Watanabe, Thin Solid Films 343-344, 145 (1999).
7. A. Hachigo, H. Nakahata, K. Higaki, S. Fujii, and S. Shikata, Appl. Phys. Lett. 65, 2556 (1994).
8. J. Hinze and K. Ellmer, J. Appl. Phys. 88, 2443 (2000).
9. S. V. Prasad, S. D. Walck, and J. S. Zabinski, Thin Solid Films 360, 107 (2000).
10. X. W. Sun and H. S. Kowk, J. Appl. Phys. 86, 408 (1999).
11. K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, T. Tanabe, and H. Takasu, J. Cryst. Growth 214/215, 50 (2000).
12. M. Joseph, H. Tabata, and T. Kawai, Appl. Phys. Lett. 74, 2543 (1999).
13. Z. X. Fu, B. X. Lin, G. H. Liao, and Z. Q. Wu, J. Cryst. Growth 193, 316 (1998).
14. W. Kern and D. A. Puotinen, RCA Rev. 31, 187 (1970).
15. W. T. Lim and C. H. Lee, Thin Solid Films 353, 12 (1999).
16. Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Appl. Phys. Lett. 72, 3270 (1998).
17. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996).
18. P. O. Holtz, B. Monemar, and H. J. Lozykowski, Phys. Rev. B 32, 986 (1985).
19. D. S. Jiang, H. Jung, and K. Ploog, J. Appl. Phys. 64, 1371 (1988).
20. S. Yamauchi, T. Hariu, H. Ohba, and K. Sawamura, Thin Solid Films 316, 93 (1998).
21. L. T. Romano, R. D. Bringans, X. Zhou, and W. P. Kirk, Phys. Rev. B 52, 11201 (1995).