Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 94-98

  Ma, J G ^a,d   Liu, Y C ^a   Mu, R ^b,c   Zhang, J Y ^a   Lu, Y M ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b FISK UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d Ctr Adv Optoelectron Funct MR   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; DOPING (ADDITIVES); EXCITONS; MAGNETRON SPUTTERING; NITROGEN; PHOTOLUMINESCENCE; QUENCHING; RAMAN SCATTERING; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC ALLOYS;

PEAK INTENSITY; RADIO FREQUENCIES;

ZINC OXIDE;

EID: 1642362990     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1641057     Document Type: Conference Paper

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