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Materials Research Society Symposium - Proceedings

Volumn 666, Issue , 2001, Pages F261-F2612

A theoretical study of p-type doping of ZnO: Problems and solutions

(4) Yan, Yanfa a Zhang, S B a Pennycook, S J a Pantelides, S T a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; FERMI LEVEL; PROBABILITY DENSITY FUNCTION; PROBLEM SOLVING; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ENERGY CALCULATIONS;

ZINC OXIDE;

EID: 0035559264 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-666-f2.6 Document Type: Article

Times cited : (8)

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