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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 4, 2005, Pages 715-719

Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: A token of the integrity of a nanostructure

(5) Shin, H a Yoon, E b Hong, K S b Lee, W c Yoo, Y H a,d

a Gangneung Wonju National University (South Korea)

b Seoul National University (South Korea)

c Yonsei University (South Korea)

d Agency for Defence Development (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY ABSORPTION; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PHOTODETECTORS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA;

BLUESHIFTS; EMISSION ENERGY; INTERDOTS; NANOSTRUCTURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 22044456888 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-005-3222-4 Document Type: Article

Times cited : (11)

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