Strain and electronic interactions in InAs/GaAs quantum dot multilayers for 1300 nm emission

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1365-1370

  Le Ru, E C ^a   Bennett, A J ^a   Roberts, C ^a   Murray, R ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT LAYERS; ELECTRONIC INTERACTIONS; EMISSION PEAKS; EMISSION PROPERTIES; INAS; INAS/GAAS; LOCAL STRAINS; MODAL GAIN; SECOND LAYER; SELF-ASSEMBLED; SINGLE LAYER; SINGLE PEAK; SPACER LAYER; SURFACE UNDULATION; TWO LAYERS;

INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

MULTILAYERS;

EID: 0036470095     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1429797     Document Type: Article

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