Photoluminescence Study of High-Quality InGaAs/GaAs Quantum Dots on (111)B GaAs Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 558-562

  Tsai, Fu Yi ^a   Lee, Chien Ping ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Epitaxy; Gaas; Ingaas; Photoluminescence; Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

FULL-WIDTH AT HALF-MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032614351     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.558     Document Type: Article

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