Improved luminescence from quantum-dot nanostructures embedded in structurally engineered (In,Ga)As confining layers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 5, 2002, Pages 1045-1050

  Chen, L ^a,b   Stoleru, V G ^a,b   Towe, E ^a,b  

^a UNIVERSITY OF VIRGINIA   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Emission spectra; Nanostructures; Quantum dots; Strain

Indexed keywords

CURRENT DENSITY; ELECTRON EMISSION; EMISSION SPECTROSCOPY; LUMINESCENCE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

OPTICAL QUALITY; QUANTUM DOT NANOSTRUCTURES; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036765496     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.804231     Document Type: Article

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