Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 8898-8902

  He, J ^a   Zhang, Y C ^a   Xu, B ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL PROPERTIES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SPACER LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037974619     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1570503     Document Type: Article

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