Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on GaAs(001) grown by heterogeneous droplet epitaxy

Applied Physics Letters

Volumn 80, Issue 23, 2002, Pages 4345-4347

  Liu, N ^a   Lyeo, H K ^a   Shih, C K ^a   Oshima, M ^b   Mano, T ^c   Koguchi, N ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; DROPLET EPITAXY; GAAS(001); INGAAS QUANTUM DOTS; LARGE SIZES; SELF-COMPENSATION EFFECTS; SIZE DEPENDENCE; TRAPEZOIDAL SHAPE;

DROPS; EPITAXIAL GROWTH; INDIUM; LIGHT POLARIZATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79956022887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1479196     Document Type: Article

References (23)

1. See for example, Phys. Today 49, 22 (1996);
2. MRS Bull. 23, 31 (1998); and references therein.
3. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993). apl APPLAB 0003-6951
4. H. Ishikawa, H. Shoji, Y. Nakata, M. Sugawara, M. Egawa, N. Otsuka, Y. Sugiyama, T. Futatsugi, and N. Yokoyama, J. Vac. Sci. Technol. A 16, 794 (1998). jva JVTAD6 0734-2101
5. N. Perret, D. Morris, L. Franchomme-Fossé, R. Coté, S. Fafard, V. Aimez, and J. Beauvais, Phys. Rev. B 62, 5092 (2000), and references therein. prb PRBMDO 0163-1829
6. P. M. Petroff, K. H. Schmidt, G. M. Ribeiro, A. Lorke, and J. Kotthaus, Jpn. J. Appl. Phys., Part 1 36, 4068 (1997). jjb JAPNDE 0021-4922
7. Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, K. Shiramine, T. Haga, Y. Nakata, and N. Yokoyama, Phys. Rev. Lett. 80, 2650 (1998). prl PRLTAO 0031-9007
8. I. Mukhametzhanov, Z. Wei, R. Heitz, and A. Madhukar, Appl. Phys. Lett. 75, 85 (1999). apl APPLAB 0003-6951
9. N. Koguchi and K. Ishige, Jpn. J. Appl. Phys., Part 1 32, 2052 (1993). jjb JAPNDE 0021-4922
10. N. Koguchi, S. Takahashi, and T. Chikyow, J. Cryst. Growth 111, 688 (1991). jcr JCRGAE 0022-0248
11. T. Mano, K. Watanabe, S. Tsukamoto, H. Fujioka, M. Oshima, and N. Koguchi, J. Cryst. Growth 209, 504 (2000). jcr JCRGAE 0022-0248
12. T. Mano, K. Watanabe, S. Tsukamoto, N. Koguchi, H. Fujioka, M. Oshima, C.-D. Lee, J.-Y. Leern, H. J. Lee, and S. K. Noh, Appl. Phys. Lett. 76, 3543 (2000). apl APPLAB 0003-6951
13. T. Mano, K. Watanabe, S. Tsukamoto, H. Fujioka, M. Oshima, and N. Koguchi, Jpn. J. Appl. Phys., Part 1 38, L1009 (1999). jjb JAPNDE 0021-4922
14. N. Liu, J. Tersoff, O. Baklenov, A. L. Holmes, Jr., and C. K. Shih, Phys. Rev. Lett. 84, 334 (2000). prl PRLTAO 0031-9007
15. K.-J. Chao, C.-K. Shih, D. W. Gotthold, and B. G. Streetman, Phys. Rev. Lett. 79, 4822 (1997). prl PRLTAO 0031-9007
16. J. F. Zheng, J. D. Walker, M. B. Salmeron, and E. R. Weber, Phys. Rev. Lett. 72, 2414 (1994). prl PRLTAO 0031-9007
17. M. Pfister, M. B. Johnson, S. F. Alvarado, H. W. M. Salemink, U. Marti, D. Martin, F. Morier-Genoud, and F. K. Reinhart, Appl. Phys. Lett. 67, 1459 (1995). apl APPLAB 0003-6951
18. H. Eisele, O. Flebbe, T. Kalka, C. Preinsberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, Appl. Phys. Lett. 75, 106 (1999). apl APPLAB 0003-6951
19. H. Chen, R. M. Feenstra, R. S. Goldman, C. Silfvenius, and G. Landgren, Appl. Phys. Lett. 72, 1727 (1998). apl APPLAB 0003-6951
20. T. Mano, S. Tsukamoto, N. Koguchi, H. Fujioka, and M. Oshima, J. Cryst. Growth 227-228, 1069 (2001). jcr JCRGAE 0022-0248
21. T. Mano, K. Watanabe, S. Tsukamoto, Y. Imanaka, T. Takamasu, H. Fujioka, G. Kido, M. Oshima, and N. Koguchi, Jpn. J. Appl. Phys., Part 1 39, 4580 (2000). jjb JAPNDE 0021-4922
22. K. Watanabe, N. Koguchi, and Y. Gotoh, Jpn. J. Appl. Phys., Part 2 39, L79 (2000). jjc JAPLD8 0021-4922
23. K. Watanabe, S. Tsukamoto, Y. Gotoh, and N. Koguchi, J. Cryst. Growth 227-228, 1073 (2001). jcr JCRGAE 0022-0248