Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots

Journal of Physics Condensed Matter

Volumn 15, Issue 31, 2003, Pages 5383-5388

  Gong, Z ^a   Fang, Z D ^a   Xu, X H ^a   Miao, Z H ^a   Niu, Z C ^a   Feng, S L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

EXCITED RADIATIVE TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0041878783     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/31/305     Document Type: Article

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