Strained coherent InAs quantum box islands on GaAs(100): Size equalization, vertical self-organization, and optical properties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2203-2207

  Xie, Qianghua ^a   Kobayashi, N P ^a   Ramachandran, T R ^a   Kalburge, A ^a   Chen, P ^a   Madhukar, A ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544265104     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588900     Document Type: Article

References (19)

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9. For a review, see A. Madhukar, P. Chen, Q. Xie, A. Konkar, T. R. Ramachandran, N. P. Kobayashi, and R. Viswanathan, in Low Dimensional Structures Prepared by Expitaxial Growth or Regrowth on Patterned Substrates, edited by K. Eberl, P. M. Petroff, and P. Demeester (Singapore Scientific, Singapore, 1995), p. 19; S. V. Ghaisas and A. Madhukar, J. Vac. Sci. Technol. B 7, 264 (1989).
10. For a review, see A. Madhukar, P. Chen, Q. Xie, A. Konkar, T. R. Ramachandran, N. P. Kobayashi, and R. Viswanathan, in Low Dimensional Structures Prepared by Expitaxial Growth or Regrowth on Patterned Substrates, edited by K. Eberl, P. M. Petroff, and P. Demeester (Singapore Scientific, Singapore, 1995), p. 19; S. V. Ghaisas and A. Madhukar, J. Vac. Sci. Technol. B 7, 264 (1989).
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14. In our previous publications (Refs. 2, 10, and 12), InAs coverages cited were with respect to InAs (100) surface atomic density. For the same amount of InAs deposition, the value of InAs coverage referred to as the GaAs (100) surface should be multiplied by a factor of 0.87.
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