-
1
-
-
0024752976
-
Heterojunction bipolar transistors using Si-Ge alloys
-
S. S. Iyer, G. L. Patton, J. M. C. Stork, B. S. Meyerson, and D. L. Harame, "Heterojunction bipolar transistors using Si-Ge alloys", IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2043-2064, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, Issue.10
, pp. 2043-2064
-
-
Iyer, S.S.1
Patton, G.L.2
Stork, J.M.C.3
Meyerson, B.S.4
Harame, D.L.5
-
2
-
-
0026867876
-
High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
-
K. Ismail, B. S. Meyerson, S. Rishton, J. Chu, S. Nelson, and J. Nocera, "High-transconductance n-type Si/SiGe modulation-doped field-effect transistors", IEEE Electron Device Lett., vol. 13, no. 5, pp. 229-231, 1992.
-
(1992)
IEEE Electron Device Lett
, vol.13
, Issue.5
, pp. 229-231
-
-
Ismail, K.1
Meyerson, B.S.2
Rishton, S.3
Chu, J.4
Nelson, S.5
Nocera, J.6
-
3
-
-
0028758513
-
Strain dependence of the Performance Enhancement in Strained-Si n-MOSFETs
-
J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, "Strain dependence of the Performance Enhancement in Strained-Si n-MOSFETs", in IEDM Tech. Dig., 1994, pp. 373-376.
-
(1994)
IEDM Tech. Dig
, pp. 373-376
-
-
Welser, J.1
Hoyt, J.L.2
Takagi, S.3
Gibbons, J.F.4
-
4
-
-
0036927652
-
Strained silicon MOSFET technology
-
J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. A. Fitzgerald, and D. A. Antoniadis, "Strained silicon MOSFET technology", IEDM Tech. Dig., pp. 23-26, 2002.
-
(2002)
IEDM Tech. Dig
, pp. 23-26
-
-
Hoyt, J.L.1
Nayfeh, H.M.2
Eguchi, S.3
Aberg, I.4
Xia, G.5
Drake, T.6
Fitzgerald, E.A.7
Antoniadis, D.A.8
-
5
-
-
0034794354
-
Strained Si NMOSFETs for high performance CMOS technology
-
K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, and H.-S. P. Wong, "Strained Si NMOSFETs for high performance CMOS technology", Symposium on VLSI Technology Digest of Technical Papers, pp. 59-60, 2001.
-
(2001)
Symposium on VLSI Technology Digest of Technical Papers
, pp. 59-60
-
-
Rim, K.1
Koester, S.2
Hargrove, M.3
Chu, J.4
Mooney, P.M.5
Ott, J.6
Kanarsky, T.7
Ronsheim, P.8
Ieong, M.9
Grill, A.10
Wong, H.-S.P.11
-
6
-
-
0036931972
-
A 90nm logic technology featuring 50nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and lum2 SRAM cell
-
S. Thompson, N. Anand, M. Armstrong, C. Auth, B. Ar-cot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C. Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T. Hoffmann, M. Hussein, P. Jacob A. Jain, C. Jan, S. Joshi, C. Kenyon, J. Klaus, S. Klopic, J. Luce, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, P. Nguyen, H. Pearson, T. Sandford, R. Schwe-infurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr, "A 90nm logic technology featuring 50nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and lum2 SRAM cell", IEDM Tech. Dig., pp. 61-64, 2002.
-
(2002)
IEDM Tech. Dig
, pp. 61-64
-
-
Thompson, S.1
Anand, N.2
Armstrong, M.3
Auth, C.4
Ar-Cot, B.5
Alavi, M.6
Bai, P.7
Bielefeld, J.8
Bigwood, R.9
Brandenburg, J.10
Buehler, M.11
Cea, S.12
Chikarmane, V.13
Choi, C.14
Frankovic, R.15
Ghani, T.16
Glass, G.17
Han, W.18
Hoffmann, T.19
Hussein, M.20
Jacob, P.21
Jain, A.22
Jan, C.23
Joshi, S.24
Kenyon, C.25
Klaus, J.26
Klopic, S.27
Luce, J.28
Ma, Z.29
McIntyre, B.30
Mistry, K.31
Murthy, A.32
Nguyen, P.33
Pearson, H.34
Sandford, T.35
Schwe-Infurth, R.36
Shaheed, R.37
Sivakumar, S.38
Taylor, M.39
Tufts, B.40
Wallace, C.41
Wang, P.42
Weber, C.43
Bohr, M.44
more..
-
7
-
-
0026926915
-
Electron drift mobility model for devices based on unstrained and coherently strained Si1-xGex: Grown on (001) silicon substrate
-
T. Manku and A. Nathan, "Electron drift mobility model for devices based on unstrained and coherently strained Si1-xGex: grown on (001) silicon substrate", IEEE Trans. Electron Devices, vol. 39, no. 9, pp. 2082-2089, 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, Issue.9
, pp. 2082-2089
-
-
Manku, T.1
Nathan, A.2
-
8
-
-
0028515347
-
In-plane transport properties of Si/Si1-xGex structure and its FET performance by computer simulation
-
T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, "In-plane transport properties of Si/Si1-xGex structure and its FET performance by computer simulation", IEEE Trans. Electron Devices, vol. 41, no. 9, pp. 1513-1522, 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, Issue.9
, pp. 1513-1522
-
-
Yamada, T.1
Zhou, J.-R.2
Miyata, H.3
Ferry, D.K.4
-
9
-
-
0001038893
-
Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys
-
M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys", J. Appl. Phys., vol 80, pp. 2234-2252, 1996.
-
(1996)
J. Appl. Phys
, vol.80
, pp. 2234-2252
-
-
Fischetti, M.V.1
Laux, S.E.2
-
10
-
-
0003429911
-
-
Dissertation, Universitat Bremen, Bremen, (H. Utz Verlag Wis-senschaft, München: 1998)
-
F. M. Bufler, "Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe", Dissertation, Universitat Bremen, Bremen, 1997, (H. Utz Verlag Wis-senschaft, München: 1998).
-
(1997)
Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe
-
-
Bufler, F.M.1
-
11
-
-
0032607404
-
Full-band Monte Carlo model of electron and hole transport in strained Si including inelastic acoustic phonon scattering
-
B. Fischer and K. R. Hofmann, "Full-band Monte Carlo model of electron and hole transport in strained Si including inelastic acoustic phonon scattering", Appl. Pkys. Lett., vol. 74, pp. 2185-2187, 1999.
-
(1999)
Appl. Pkys. Lett
, vol.74
, pp. 2185-2187
-
-
Fischer, B.1
Hofmann, K.R.2
-
12
-
-
0032307773
-
Consistent hydrodynamic and Monte-Carlo simulation of SiGe HBTs based on table models for the relaxation times
-
B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, and B. Mein-erzhagen, "Consistent hydrodynamic and Monte-Carlo simulation of SiGe HBTs based on table models for the relaxation times", VLSI Design, vol. 8, pp. 387-391, 1998.
-
(1998)
VLSI Design
, vol.8
, pp. 387-391
-
-
Neinhüs, B.1
Decker, S.2
Graf, P.3
Bufler, F.M.4
Mein-Erzhagen, B.5
-
13
-
-
84907523528
-
Full band Monte-Carlo device simulation of an 0.1 μm n-channel MOSFET in strained silicon material
-
Sept
-
S. Keith, F. M. Bufler, and B. Meinerzhagen, "Full band Monte-Carlo device simulation of an 0.1 μm n-channel MOSFET in strained silicon material", in Proc. ESSDERC, Stuttgart, Sept. 1997, pp. 200-203.
-
(1997)
Proc. ESSDERC, Stuttgart
, pp. 200-203
-
-
Keith, S.1
Bufler, F.M.2
Meinerzhagen, B.3
-
14
-
-
84908209696
-
Full band Monte Carlo device simulation of 0.1-0.5 μm strained-Si P-MOSFETs
-
Bordeaux
-
S. Keith, C. Jungemann, and B. Meinerzhagen, "Full band Monte Carlo device simulation of 0.1-0.5 μm strained-Si P-MOSFETs", in Proc. ESSDERC, Bordeaux, 1998, pp. 312-315.
-
(1998)
Proc. ESSDERC
, pp. 312-315
-
-
Keith, S.1
Jungemann, C.2
Meinerzhagen, B.3
-
15
-
-
0038733750
-
Scaling of strained-si n-MOSFETs into the ballistic regime and associated anisotropic effects
-
F. M. Bufler and W. Fichtner, "Scaling of strained-si n-MOSFETs into the ballistic regime and associated anisotropic effects", IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 278-284, 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.2
, pp. 278-284
-
-
Bufler, F.M.1
Fichtner, W.2
-
16
-
-
30344472859
-
Electronic-band parameters in strained Si1-xGex alloys on Si1-vGev, substrates
-
M. M. Rieger and P. Vogl, "Electronic-band parameters in strained Si1-xGex alloys on Si1-vGev, substrates", Phys. Rev. B, vol. 48, pp. 14276-14287, 1993.
-
(1993)
Phys. Rev. B
, vol.48
, pp. 14276-14287
-
-
Rieger, M.M.1
Vogl, P.2
-
17
-
-
0032276833
-
Full-band Monte Carlo simulation of a 0.12μm-Si-PMOSFET with and without a strained SiGe-channel
-
San Francisco (USA)
-
C. Jungemann, S. Keith, and B. Meinerzhagen, "Full-band Monte Carlo simulation of a 0.12μm-Si-PMOSFET with and without a strained SiGe-channel", in IEDM Tech. Dig., San Francisco (USA), 1998, pp. 897-900.
-
(1998)
IEDM Tech. Dig
, pp. 897-900
-
-
Jungemann, C.1
Keith, S.2
Meinerzhagen, B.3
-
18
-
-
0033357461
-
Efficient full-band Monte Carlo simulation of silicon devices
-
C. Jungemann, S. Keith, M. Battels, and B. Meinerzhagen, "Efficient full-band Monte Carlo simulation of silicon devices", IEICE Trans, on Electronics, vol. E82-C, no. 6, pp. 870-879, 1999.
-
(1999)
IEICE Trans, on Electronics
, vol.E82-C
, Issue.6
, pp. 870-879
-
-
Jungemann, C.1
Keith, S.2
Battels, M.3
Meinerzhagen, B.4
-
19
-
-
0000728146
-
Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile
-
C. Jungemann, S. Keith, and B. Meinerzhagen, "Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile", IEICE Trans, on Electronics, vol. E83-C, no. 8, pp. 1228-1234, 2000.
-
(2000)
IEICE Trans, on Electronics
, vol.E83-C
, Issue.8
, pp. 1228-1234
-
-
Jungemann, C.1
Keith, S.2
Meinerzhagen, B.3
-
20
-
-
0028430092
-
Phase-space simplex Monte Carlo for semiconductor transport
-
J. Bude and R. K. Smith, "Phase-space simplex Monte Carlo for semiconductor transport", Semicond. Sci. Tech-nol., vol. 9, pp. 840-843, 1994.
-
(1994)
Semicond. Sci. Tech-nol
, vol.9
, pp. 840-843
-
-
Bude, J.1
Smith, R.K.2
-
21
-
-
0028747841
-
On the universality of inversion layer mobility in Si MOSFET's: Part I-Effects of substrate impurity concentration
-
S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFET's: Part I-Effects of substrate impurity concentration", IEEE Trans. Electron Devices, vol. 41, pp. 2357-2362, 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 2357-2362
-
-
Takagi, S.1
Toriumi, A.2
Iwase, M.3
Tango, H.4
-
22
-
-
2342595760
-
Electron inversion layer mobility in strained-si n-MOSFETs with high channel doping concentration achieved by ion implantation
-
H. M. Nayfeh, J. X. Hoyt, C. W. Leitz, A. J. Pitera, E. A. Fitzgerald, and D. A. Antoniadis, "Electron inversion layer mobility in strained-si n-MOSFETs with high channel doping concentration achieved by ion implantation", in DRC, 2002, vol. 60, pp. 43-44.
-
(2002)
DRC
, vol.60
, pp. 43-44
-
-
Nayfeh, H.M.1
Hoyt, J.X.2
Leitz, C.W.3
Pitera, A.J.4
Fitzgerald, E.A.5
Antoniadis, D.A.6
-
23
-
-
0028383440
-
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
-
J. Welser, J. L. Hoyt, and J. F. Gibbons, "Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors", IEEE Electron Device Lett., vol. 15, no. 3, pp. 100-102, 1994.
-
(1994)
IEEE Electron Device Lett
, vol.15
, Issue.3
, pp. 100-102
-
-
Welser, J.1
Hoyt, J.L.2
Gibbons, J.F.3
-
24
-
-
0032256253
-
25 nm CMOS design considerations
-
Y. Taur, C. H. Warm, and D. J. Frank, "25 nm CMOS design considerations", IEDM Tech. Dig., pp. 789-792, 1998.
-
(1998)
IEDM Tech. Dig
, pp. 789-792
-
-
Taur, Y.1
Warm, C.H.2
Frank, D.J.3
-
25
-
-
0036253371
-
Essential physics of carrier transport in nanoscale MOSFETs
-
M. Lundstrom and Z. Ren, "Essential physics of carrier transport in nanoscale MOSFETs", IEEE Trans. Electron Devices, vol. 49, no. 1, pp. 133-141, 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.1
, pp. 133-141
-
-
Lundstrom, M.1
Ren, Z.2
-
26
-
-
0001056045
-
Monte Carlo calculation of electron transport in solids
-
P. J. Price, "Monte Carlo calculation of electron transport in solids", Semiconductors and Semimetals, vol. 14, pp. 249-309, 1979.
-
(1979)
Semiconductors and Semimetals
, vol.14
, pp. 249-309
-
-
Price, P.J.1
|