Significant role of cold carriers for dielectric breakdown in HfSiON

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 142-143

  Hirano, I ^a   Yamaguchi, T ^a   Sekine, K ^b   Takayanagi, M ^b   Eguchi, K ^b   Tsunashima, Y ^b   Satake, H ^a  

^a Device Process Development Center   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TRAPS; HOT CARRIERS; MISFET DEVICES; POLYSILICON; POTENTIAL ENERGY; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

COLD CARRIERS; DIELECTRIC BREAKDOWN; HOLE-FLUX CONDITIONS; HOT CARRIER INJECTIONS;

HAFNIUM COMPOUNDS;

EID: 4544325641     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.2004.1345441     Document Type: Conference Paper

References (5)

1. K. F. Schuegraf et al, ED-41, p. 761 (1994).
2. Y. Kamakura et al, IEDM p.81 (1997).
3. T. Yamaguchi et al, Proc. IRPS p. 34 (2003).
4. H. Satake, S. Takagi, and A. Toriumi, Proc. IRPS, p. 158 (1997).
5. A.S.Foster et al, Phys.Rev.B vol.65, p.174117(2002)