Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 21-24

  Choi, R ^a,b   Lee, B H ^b   Brown, G ^c   Zeitzoff, P ^c   Sim, J H ^c   Lee, J C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b IBM   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DEGRADATION; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYSILICON; STRESS ANALYSIS;

CHARGE PUMPING; GATE DIELECTRICS; HIGH ENERGY BANDS; STATE DENSITY;

MOSFET DEVICES;

EID: 14844282819     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 2 Gate Dielectric Prepared by Low Temperature Oxidation of ZrN", IEDM Tech Dig., 2001, p. 459
2. A.L.P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, and L. Colombo, "Advanced CMOS transistors with a novel HfSiON gate dielectric," in VLSI Tech. Dig., pp. 148-149, 2002
3. G. Groeseneken, H. E. Macs, N. Beltran and R. R. De Keersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Transactions on Electron Devices, volume 31, p42, 1984
4. P. E. Nicollian, M. Rodder, D. T. Grider, P. Chen, R. M. Wallace, S.V. Hattangady, "Low voltage stress-induced-leakage-current in ultrathin gate oxides", in 1999 International Reliability Physics Symposium, p400, 1999