Investigation of hot carrier effects in n-MISFETs with HfSiON gate dielectric

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 13-17

  Takayanagi, M ^a   Watanabe, T ^a   Iijima, R ^a   Ishimaru, K ^a   Tsunashima, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Cold electrons; HiSiON; Hot carrier effect; Worst stress condition

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; HOT CARRIERS; HOT ELECTRONS; MISFET DEVICES; MOSFET DEVICES; RELIABILITY;

COLD ELECTRONS; DEGRADATION MECHANISM; HFSION GATE DIELECTRICS; HISION; HOT CARRIER EFFECT; HOT CARRIER RELIABILITY; POLYSILICON GATE ELECTRODES; STRESS CONDITION;

GATE DIELECTRICS;

EID: 84932097609     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315294     Document Type: Conference Paper

References (10)

1. A. L. P. Rontondaro, M. R. Visokay, V, A. Shanware, J. J. Thambers, L. Colombo, IEEE EDL, vol.23, p. 603 (2002).
2. T. Watanabe, M. Takayanagi, R. Iijima, K. Ishimaru, H. Ishiuchi, Tnd Y. Tsunashima, Symp. on VLSI Tech., p. 9 (2003).
3. A. Shanware, M. R. Visokay, I. S. Chambers, A. L. P. Rontondaro, T. Bu, M. J. Bevan, R. Khamankar, S. Aur, P. E. Nicoffian, J. TcPherson, L. Colombo, Proc. oflRPS, p. 208 (2003).
4. A. Shanware, M. R. Visokay, J. J. Chambers, A. L, P. Rontondaro, T. McPherson, L. Colombo, Tech. Digest of IEDM, p. 939 (2003)
5. M. Koyama, H. Satake,M. Koike,T. Ino,M, Suzuki, R. Iijima, Y. Tamimuta, A. Takashima, C. Hocgo, and A. Nishiyama, Tech. Tigest of IEDM, p. 931 (2003)
6. D. A. Buchanan, E. P. Gusev, E. Carrier, H. Okorn-Schmidt, K. Tim, M. A. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Tuha, N. Bojarczuk, A. Cailegari, C. D'Emic, P. Kozlowski, K. Than, R. J. Fleming, P. C. Jamison, J. Brown, R. Arndt, IEDM Tech. Dig., p. 223 (2000)
7. A. Kerber, E. Cariter, L.A. Ragnarsson, M. Rosmeulen, L. Tantisano, R. Degraeve, Y. Kim, G. Groeseneken, Symp. on TLSI Tech., p. 159(2003)
8. S, Zafar, A. Cailegari, E. Gusev, and M. V. Fischetti, J. Appl. Thys., vol. 93, p.9298 (2003)
9. E. Li, E. Rosenbaum, J. Tao, G. C-F Yeap, M -R. Lin, and P. Fang, Troceedings of IRPS 1999, pp. 253-258(1999)
10. E. Takeda, Y. Nakagome, H. Kume, S. Asai, IEE Proc. Vol. 130, p. 144(1983)