Effects of high-field electrical stress on the conduction properties of ultrathin La2 O3 films

Applied Physics Letters

Volumn 86, Issue 23, 2005, Pages 1-3

  Miranda, E ^a   Molina, J ^b   Kim, Y ^b   Iwai, H ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; EQUIVALENT CIRCUITS; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; STRESS ANALYSIS;

FOWLER-NORDHEIM TUNNELING CONDUCTION; JUNCTION DIODES; ROOM TEMPERATURE; SERIES RESISTANCE;

ULTRATHIN FILMS;

EID: 21244436017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1944890     Document Type: Article

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