Successive oxide breakdown statistics: Correlation effects, reliability methodologies, and their limits

IEEE Transactions on Electron Devices

Volumn 51, Issue 10, 2004, Pages 1584-1592

  Suné, Jordi ^a   Wu, Ernest Y ^b   Lai, Wing L ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; GATES (TRANSISTOR); RELIABILITY THEORY; WEIBULL DISTRIBUTION;

CORRELATION EFFECTS; DIELECTRIC BREAKDOWN; GATE DIELECTRICS; SUCCESIVE OXIDE BREAKDOWN STATISTICS;

MOS DEVICES;

EID: 5444270038     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.835986     Document Type: Article

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