Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress

Journal of Applied Physics

Volumn 89, Issue 10, 2001, Pages 5497-5501

  Huang, Chia Hong ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039189964     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1364654     Document Type: Article

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