Space-charge-limited current conductions in La 2O 3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 81-84

  Kim, Yongshik ^a   Ohmi, Shun Ichiro ^a   Tsutsui, Kazuo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY-NITROGEN ANNEALING; SPACE-CHARGE-LIMITED CURRENT (SCLC); TRAP-ASSISTED TUNNELING (TAT); VARIABLE RANGE HOPPING (VRH);

ANNEALING; DIFFERENTIAL EQUATIONS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON BEAMS; FERMI LEVEL; GATES (TRANSISTOR); LANTHANUM COMPOUNDS; MASKS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS;

THIN FILMS;

EID: 17644425744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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