Method for extracting series resistance in MOS devices using Fowler-Nordheim plot

Electronics Letters

Volumn 40, Issue 18, 2004, Pages 1153-1154

  Miranda, E ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONS; OSCILLATIONS;

FOWLER-NORDHEIM PLOT; POTENTIAL DROP; SERIES RESISTANCE; TUNNELLING CURRENT;

MOS DEVICES;

EID: 4544238864     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045581     Document Type: Article

References (8)

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8. +-oxide-silicon (p) structures: effect of the oxide thickness', J. Appl. Phys., 1999, 85, pp. 7768-7773