Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Nanotechnology

Volumn 16, Issue 4, 2005, Pages 422-428

  Zhang, Y Y ^a   Zhang, J ^a,b   Luo, G ^a   Zhou, X ^b   Xie, G Y ^a,b   Zhu, T ^a   Liu, Z F ^a,b  

^a PEKING UNIVERSITY   (China)

^b Nanotechnology Industrialization Base of China   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALCOHOLS; ANISOTROPY; ASPECT RATIO; ETCHING; OXIDATION; SILICON;

ANISOTROPIC WET ETCHING; ELECTRONIC CIRCUITRY; ISOPROPYL ALCOHOL (IPA); SCANNING PROBE OXIDATION (SPO);

NANOSTRUCTURED MATERIALS;

EID: 21144442992     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/4/015     Document Type: Article

References (32)

1. Craighead H G 2000 Science 290 1532
2. Wu H, Odom T W, Chiu D T and Whitesides G M 2003 J. Am. Chem. Soc. 125 554
3. Ehbets P, Herzig H P, Prongue D and Gale M T 1992 Opt. Lett. 17 908
4. Chen Y F, Peng K W and Cui Z 2004 Microelectron. Eng. 73/74 662
5. Ocola L E, Tennant D M and Ye P D 2003 Microelectron. Eng. 67/68 104
6. Chen Y, MacIntyre D and Thorns S 2001 Microelectron. Eng. 57/58 939
7. Mouroulis P, Hartley F T, Wilson D W and White V E 2003 Opt. Express 11 270
8. Cuisin C, Chelnokov A, Lourtioz J-M, Decanini D and Chen Y 2000 Appl. Phys. Lett. 77 770
9. Vasile M J, Nassar R and Xie J 1998 J. Vac. Sci. Technol. B 16 2499
10. Chou S Y, Krauss P R and Renstrom P J 1996 Science 272 85
11. Chou S Y, Krauss P R and Renstrom P J 1995 Appl. Phys. Lett. 67 3114
12. Sun X Y, Zhuang L, Zhang W and Chou S Y 1998 J. Vac. Sci. Technol. B 16 3922
13. Colburn M, Grot A, Choi B J, Amistoso M, Bailey T, Sreenivasan S V, Ekerdt J G and Willson C G 2001 J. Vac. Sci. Technol. B 19 2162
14. Zhang W and Chou S Y 2001 Appl. Phys. Lett. 79 845
15. Dagata J A 1995 Science 270 1625
16. Snow E S, Park D and Campbell P M 1996 Appl. Phys. Lett. 69 269
17. Hurley P T, Ribbe A E and Buriak J M 2003 J. Am. Chem. Soc. 125 11334
18. Dagata J A, Scneir J, Harary H H, Evans C J, Postek M T and Bennett J 1990 Appl. Phys. Lett. 56 2001
19. Snow E S and Campbell P M 1995 Science 270 1639
20. Dagata J A, Inoue T, Itoh J, Matsumoto K and Yokoyama H 1998 J. Appl. Phys. 84 6891
21. Sugimura H and Nakagiri N 1996 J. Vac. Sci. Technol. B 14 1223
22. Sakurai M, Thirstrup C and Aono M 2000 Phys. Rev. B 62 167
23. O'Brien J L, Schofleld S R, Simmons M Y, Clark R G, Dzurak A S, Curson N J, Kane B E, McAlpine N S, Hawley M E and Brown G W 2001 Phys. Rev. B 64 161401
24. Chien F S S, Chang J W, Lin S W, Chou Y C, Chen T T, Gwo S, Chao T S and Hsieh W F 2000 Appl. Phys. Lett. 76 360
25. Stievenard D, Fontaine P A and Dubois E 1997 Appl. Phys. Lett. 70 3272
26. Avouris Ph, Hertel T and Martel R 1997 Appl. Phys. Lett. 71 285
27. Snow E S, Jernigan G G and Campbell P M 2000 Appl. Phys. Lett. 76 1782
28. Chien F S S, Wu C L, Chou Y C, Chen T T, Gwo S and Hsieh W F 1999 Appl. Phys. Lett. 75 2429
29. Chien F S S, Chou Y C, Chen T T, Hsieh W F, Chao T S and Gwo S 2001 J. Appl. Phys. 89 2465
30. Chien F S S, Hsieh W F, Gwo S, Vladar A E and Dagata J A 2001 J. Appl. Phys. 91 10044
31. Zubel I and Kramkowska M S 2001 Sensors Actuators A 93 138
32. Zubel I, Barycka I, Kotowska K and Kramkowska M S 2001 Sensors Actuators A 87 163