Fabrication of ultra-short T gates by a two-step electron beam lithography process

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 662-665

  Chen, Yifang ^a   Peng, Kaiwu ^a,b   Cui, Zheng ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (China)

Author keywords

Electron beam lithography; Forward scattering; LOR; Monte Carlo simulation; PMMA; T gate; UVIII

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON SCATTERING; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT SCATTERING; MONTE CARLO METHODS; POLYMETHYL METHACRYLATES; SILICON WAFERS;

FORWARD SCATTERING; LIFT OFF RESIST (LOR); PMMA; T GATES; UVIII;

GATES (TRANSISTOR);

EID: 2542506797     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00178-9     Document Type: Conference Paper

References (6)

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