Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 691-692

  Lee, B H ^b   Sim, J H ^c   Choi, R ^c   Bersuker, G ^a   Matthew, K ^a   Moumen, N ^b   Peterson, J J ^d   Larson, L ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CHARGE; FABRICATION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; IMPACT IONIZATION; RELIABILITY; SILICON NITRIDE;

HOT CARRIER RELIABILITY; HOT CARRIER STRESS (HCS);

MOSFET DEVICES;

EID: 3042611429     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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