SCOPUS 정보 검색 플랫폼

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 13-17

Investigation of hot carrier effects in n-MISFETs with HfSiON gate dielectric

(5) Takayanagi, M a Watanabe, T a Iijima, R b Ishimaruand, K a Tsunashima, Y b

a SoC Research and Development Center (Japan)

b TOSHIBA CORPORATION (Japan)

Author keywords

Cold electrons; HfSiON; Hot carrier effect; Worst stress condition

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; HYSTERESIS; IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELIABILITY; ROBUSTNESS (CONTROL SYSTEMS); STRESSES;

COLD ELECTRONS; HFSION; HOT CARRIER EFFECT; WORST STRESS CONDITION;

MISFET DEVICES;

EID: 3042557821 PISSN: 00999512 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (10)

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