High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

IEEE Transactions on Electron Devices

Volumn 50, Issue 11, 2003, Pages 2208-2212

  Chang, C S ^a   Chang, S J ^a   Su, Y K ^a   Kuo, C H ^a   Lai, W C ^a   Lin, Y C ^a   Hsu, Y P ^a   Shei, S C ^b   Tsai, J M ^b   Lo, H M ^b   Ke, J C ^b   Sheu, J K ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

GaN; Green light emitting diode (LED); Indium tin oxide (ITO); Short period superlattice (SPS)

Indexed keywords

ELECTRIC RESISTANCE; GLASS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

CONTACT RESISTANCES;

LIGHT EMITTING DIODES;

EID: 0242364178     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819091     Document Type: Article

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