Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

IEEE Photonics Technology Letters

Volumn 16, Issue 6, 2004, Pages 1450-1452

  Song, June O ^a   Leem, Dong Seok ^a   Kwak, J S ^b   Nam, O H ^b   Park, Y ^b   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Flip chip light emitting diode (LED); GaN; Indium oxide; Ohmic contacts

Indexed keywords

ELECTRIC RESISTANCE; FLIP CHIP DEVICES; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT REFLECTION; MAGNESIUM PRINTING PLATES; OHMIC CONTACTS; SEMICONDUCTOR DOPING;

FLIP CHIP LIGHT EMITTING DIODES; INDIUM OXIDE;

LIGHT EMITTING DIODES;

EID: 2942731841     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.827096     Document Type: Article

References (17)

1. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern, and S. A. Stockman, "High-power AlGaInN flip-chip light emitting diodes," Appl. Phys. Lett., vol. 78, pp. 3379-3381, May 2001.
2. J.-K. Ho, C.-S. Jong, C. C. Chiu, C.-N. Huang, K.-K. Shih, L.-C. Chen, F.-R. Chen, and J.-J. Kai, "Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films," J. Appl. Phys., vol. 86, pp. 4491-4497, Oct. 1999.
3. J. K. Sheu, Y. K. Su, G. C. Chi, P. L. Koh, M. J. Jou, C. M. Chang, C. C. Liu, and W. C. Hung, "High-transparency Ni/Au ohmic contact to p-type GaN," Appl. Phys. Lett., vol. 74, pp. 2340-2342, Apr. 1999.
4. T. Maeda, Y. Koide, and M. Murakami, "Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN," Appl. Phys. Lett., vol. 75, pp. 4145-4147, Dec. 1999.
5. J.-S. Jang, S.-J. Park, and T.-Y. Seong, "Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment," J. Vac. Sci. Technol. B, vol. 17, pp. 2667-2670, Nov./Dec. 1999.
6. J. Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, and T. F. Kuech, "P-GaN surface treatments for metal contacts," Appl. Phys. Lett., vol. 76, pp. 415-417, Jan. 2000.
7. J.-S. Jang, S.-J. Park, and T.-Y. Seong, "Metallization scheme for highly low-resistance, transparent, and thermally stable ohmic contact to p-GaN," Appl. Phys. Lett., vol. 76, pp. 2898-2900, May 2000.
8. L. Zhou, W. Lanford, A. T. Ping, I. Adesida, J. W. Yang, and A. Khan, "Low resistance Ti/Pt/Au ohmic contacts to p-type GaN," Appl. Phys. Lett., vol. 76, pp. 3451-3453, June 2000.
9. J.-S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. Lee, and S.-J. Park, "Low resistance Pt/Ni/Au ohmic contacts to p-type GaN," Appl. Phys. Lett., vol. 74, pp. 70-72, Jan. 1999.
10. J. S. Kwak, K. Y. Lee, J. Y. Han, J. Cho, S. Chae, O. H. Nam, and Y. Park, "Crystal polarity dependence of Ti/Al contacts to freestanding n-GaN substrate," Appl. Phys. Lett., vol. 79, pp. 3254-3256, Nov. 2001.
11. M. A. Khan, M. S. Shur, and Q. Chen, "Hall measurements and contact resistance in doped GaN/AlGaN heterostructures," Appl. Phys. Lett., vol. 68, pp. 3022-3024, May 1996.
12. S. H. Wang, S. E. Mohney, and R. Birkhahn, "Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air," J. Appl. Phys., vol. 91, pp. 3711-3716, Mar. 2002.
13. Y.-L. Li, E. F. Schubert, J. W. Graff, A. Osinsky, and W. F. Schaff, "Low-resistance ohmic contacts to p-type GaN," Appl. Phys. Lett., vol. 76., pp. 2728-2730, May 2000.
14. D. Qiao, L. S. Yu, L. Jia, P. M. Asbeck, S. S. Lau, and T. E. Haynes, "Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures," Appl. Phys. Lett., vol. 80, pp. 992-994, Feb. 2002.
15. D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, H. P. Lee, W. So, and H. Liu, "Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag," Appl. Phys. Lett., vol. 83, pp. 311-313, July 2003.
16. J.-O. Song, D.-S. Leem, J. S. Kwak, O. H. Nam, Y. Park, and T.-Y. Seong, Appl. Phys. Lett., vol. 83, p. 4990, 2003.
17. G. S. Marlow and M. B. Das, "The effects of contact size and nonzero metal resistance on the determination of special contact resistance," Solid State Electron., vol. 25, pp. 91-94, Feb. 1982.