Nitride-Based LEDs with p-InGaN Capping Layer

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2567-2570

  Chang, S J ^a   Chen, C H ^b   Chang, P C ^a   Su, Y K ^a   Chen, P C ^a   Jhou, Y D ^a   Hung, H ^a   Wang, S M ^c   Huang, B R ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Capping layer; Electroluminescence (EL) intensity; Hole concentration; InGaN; Light emitting diodes (LED); Operation voltage

Indexed keywords

DEGRADATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; ELECTROLUMINESCENCE; EVAPORATION; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUPERLATTICES; THERMAL EFFECTS; TRAFFIC SIGNALS;

CAPPING LAYERS; HOLE CONCENTRATION; OPERATION VOLTAGE;

LIGHT EMITTING DIODES;

EID: 0347968279     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.820131     Document Type: Article

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