Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure

IEEE Photonics Technology Letters

Volumn 16, Issue 8, 2004, Pages 1807-1809

  Chang, Kow Ming ^a   Chu, Jiunn Yi ^a   Cheng, Chao Chen ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Highlink Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

CONTACT RESISTIVITY; INDIUM GALLIUM NITRIDE; INDIUM TIN OXIDE; INTERFACIAL SCHOTTKY BARRIER HEIGHT; POWER EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 4043099796     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.830523     Document Type: Article

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