Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient

Applied Physics Letters

Volumn 83, Issue 18, 2003, Pages 3713-3715

  Spadafora, M ^a   Privitera, G ^a   Terrasi, A ^a   Scalese, S ^b   Bongiorno, C ^b   Carnera, A ^c   Di Marino, M ^c   Napolitani, E ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS; GERMANIUM; GERMANIUM COMPOUNDS; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; OXIDATION; OXIDES; OXYGEN; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SURFACES;

EPITAXIAL FILMS; OXIDATION RATE ENHANCEMENT; RAPID THERMAL OXIDATION; THIN OXIDES;

SILICON COMPOUNDS;

EID: 0344066269     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622439     Document Type: Article

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