SCOPUS 정보 검색 플랫폼

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 235-240

Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors

(6) Wohl G a Kasper, E a Hackbarth, T b Kibbel, H b Klose, M c Ernst, F d

a UNIVERSITY OF STUTTGART (Germany)

b DAIMLER AG (Germany)

c GERMAN AEROSPACE CENTER DLR (Germany)

d MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MORPHOLOGY; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE TOPOGRAPHY; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DENSITY; DIFFERENTIAL INTERFERENCE CONTRAST MICROGRAPH; HETERO CMOS TRANSISTOR; RELAXATION MEASUREMENT; SILICON GERMANIUM BUFFER;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035300062 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1011207319652 Document Type: Article

Times cited : (4)

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