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Journal of Applied Physics

Volumn 88, Issue 1, 2000, Pages 120-123

Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001)

(4) Di Gaspare, L a Palange, E a Capellini, G a Evangelisti, F a

a ROMA TRE UNIVERSITY (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001282263 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373705 Document Type: Article

Times cited : (26)

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