Electrical properties of SiGe epitaxial layers for photovoltaic application as studied by scanning electron microscopical methods

Solid State Phenomena

Volumn 63-64, Issue , 1998, Pages 509-518

  Kruger O ^a   Seifert, W ^a,d   Kittler, M ^a   Gutjahr, A ^b   Konuma, M ^b   Said, K ^c   Poortmans, J ^c  

^a IHP   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c IMEC   (Belgium)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Backscattered Electrons; Diffusion Length; EBIC; EDX; Electron Beam Induced Current; Epitaxial Layers; Hydrogen Passivation; Sige; Solar Cells; X Ray Microanalysis

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON IRRADIATION; INDUCED CURRENTS; LIQUID PHASE EPITAXY; PHOTOVOLTAIC CELLS; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS;

BACKSCATTERED ELECTRONS; ELECTRON BEAM INDUCED CURRENT (EBIC) METHOD; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4244073746     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.63-64.509     Document Type: Article

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