Identification of dislocations in n-type Si/Si0.88Ge0.12/Si heterostructures by deep-level transient spectroscopy

Semiconductor Science and Technology

Volumn 11, Issue 12, 1996, Pages 1838-1842

  Chretien, O ^a   Apetz, R ^a   Vescan, L ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PLASTIC RELAXATION;

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

HETEROJUNCTIONS;

EID: 0030402035     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/012     Document Type: Article

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