Hydrogen incorporation, diffusivity and evolution in bulk ZnO

Solid-State Electronics

Volumn 47, Issue 12, 2003, Pages 2255-2259

  Ip, K ^a   Overberg, M E ^a   Heo, Y W ^a   Norton, D P ^a   Pearton, S J ^a   Stutz, C E ^b   Kucheyev, S O ^c,g   Jagadish, C ^c   Williams, J S ^c   Luo, B ^d   Ren, F ^d   Look, D C ^e   Zavada, J M ^f  

^a UNIVERSITY OF FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d University of Florida   (United States)

^e WRIGHT STATE UNIVERSITY   (United States)

^f U S ARMY RESEARCH OFFICE   (United States)

^g LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Diffusion; Hydrogen; ZnO

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; HYDROGEN; PLASMAS; SECONDARY ION MASS SPECTROMETRY; ZINC OXIDE;

INTERSTITIAL MECHANISMS;

SINGLE CRYSTALS;

EID: 0142086883     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00207-7     Document Type: Article

References (26)

1. van de Walle C.C. Phys. Rev. Lett. 85:2000;1012.
2. van de Walle C.C. Phys. Status Solidi B. 229:2002;221.
3. Kilic C., Zunger Z. Appl. Phys. Lett. 81:2002;73.
4. van de Walle C.C. Physica B. 308-310:2001;899.
5. Cox S.J.F., Davis E.A., Cottrell S.P., King P.J.C., Lord J.S., Gil J.M. et al. Phys. Rev. Lett. 86:2001;2601.
6. Cox S.J.F., Davis E.A., King P.J.C., Gil J.M., Alberto H.V., Vilao R.C. et al. J. Phys. C. 13:2001;9001.
7. Hofmann D.M., Hofstaetter A., Leiter F., Zhou H., Henecker F., Meyer B.K.et al. Phys. Rev. Lett. 88:2002;045504.
8. Baik S.J., Jang J.H., Lee C.H., Cho W.Y., Lim K.S. Appl. Phys. Lett. 70:1997;3516.
9. Theys B., Sallet V., Jomard F., Lusson A., Rommeluere J.-F., Teukam Z. J. Appl. Phys. 91:2002;3922.
10. Ohashi N., Ishigaki T., Okada N., Sekiguchi T., Sakaguchi I., Haneda H. Appl. Phys. Lett. 80:2002;2869.
11. Bogatu V., Goldenbaum A., Many A., Goldstein Y. Phys. Status Solidi B. 12:1999;89.
12. Sekiguchi T., Ohashi N., Terada Y. Jap. J. Appl. Phys. 36:1997;L289.
13. Tüzemen S., Xiong G., Wilkinson J., Mischuck B., Ucer K.B., Williams R.T. J Appl Phys. 93:2002;678.
14. Han C.S., Jun J., Kim H. Appl. Surf. Sci. 175/176:2001;567.
15. Natsume Y., Sakata H. J. Mater. Sci. Mater. Electron. 12:2001;87.
16. Kang Y.-S., Kim H.Y., Lee J.Y. J. Electrochem. Sci. 147:2000;4625.
17. Ip K., Overberg M.E., Heo Y.W., Norton D.P., Pearton S.J., Kucheyev S.O.et al. Appl. Phys. Lett. 81:2002;3996.
18. Samson S., Fonstad C.G. J. Appl. Phys. 44:1973;4618.
19. SIMS performed at Charles Evans and Associates using a Cameca system.
20. Borg R.J., Dienes C.J. An introduction to solid state diffusion. 1988;Academic Press, Boston.
21. Wilson R.G., Pearton S.J., Abernathy C.R., Zavada J.M. J. Vac. Sci. Technol. A. 13:1995;719.
22. Pearton S.J., Zolper J.C., Shul R.J., Ren F. J. Appl. Phys. 86:1999;1.
23. Lavrov E.V., Weber J., Borrnet F., Van de Walle C.G., Helbig R. Phys Rev B. 89:2002;107203.
24. Look D.G. Mater. Sci. Eng. B. 80:2001;383.
25. Look D.G., Hemsky J.W., Sizelove J.R. Phys. Rev. Lett. 82:1999;2552.
26. Look D.C., Reynolds D.C., Hemsky J.W., Jones R.L., Sizelove J.R. Appl. Phys. Lett. 75:1999;811.