Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3922-3924

  Theys, Bertrand ^a   Sallet, Vincent ^a   Jomard, François ^a   Lusson, Alain ^a   Rommeluère, Jean François ^a   Teukam, Zéphyrin ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; DEUTERIUM PLASMA; DOPED ZNO; FREE ELECTRON CONCENTRATION; HYDROGEN PASSIVATION; RAPID DIFFUSION; SAPPHIRE SUBSTRATES; SECONDARY ION MASS SPECTROSCOPY; ZNO; ZNO LAYERS;

DEUTERIUM; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 0037087351     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452778     Document Type: Article

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